Semiconductor device

ABSTRACT

A semiconductor device is disclosed, which relates to a technology for a sense-amplifier (sense-amp) configured to compensate for mismatch of a sensing bit-line. The semiconductor device includes a sense-amplifier configured to selectively control connection between a pair of bit lines and a pair of sensing bit lines in response to a connection control signal in an offset compensation period, and precharge a pull-down power-supply line with a bit line precharge voltage level in the offset compensation period. The semiconductor device also includes a pull-down voltage controller configured to increase a voltage of the pull-down power-supply line by a predetermined level in response to a pull-down control signal in the offset compensation period.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority based upon Korean patent applicationNo. 10-2017-0020629, filed on Feb. 15, 2017, the disclosure of which ishereby incorporated by reference in its entirety herein.

BACKGROUND OF THE INVENTION 1. Technical Field

Embodiments of the present disclosure may generally relate to asemiconductor device, and more particularly to a technology for asense-amplifier (sense-amp) configured to compensate for mismatch of asensing bit-line.

2. Background Art

With the increasing integration degree of semiconductor memory devices,semiconductor memory devices have also been continuously improved toincrease the operation speed. In order to increase operation speeds ofsemiconductor memory devices, synchronous memory devices capable ofoperating by synchronizing with an external clock of a memory chip havebeen recently proposed and developed.

A Dynamic Random Access Memory (DRAM) from among semiconductor memorydevices is a representative volatile memory. A memory cell of the DRAMis comprised of a cell transistor and a cell capacitor.

In this case, the cell transistor controls accessing the cell capacitor,and the cell capacitor stores electric charges corresponding to data.That is, the stored data is classified into high-level data andlow-level data according to the amount of electric charges stored in thecell capacitor.

Because electric charges are applied or leaked to the cell capacitor ofthe memory cell of the DRAM by a leakage component, the correspondingdata should be periodically stored again in the cell capacitor. Asdescribed above, the above periodic storing operation for correctlymaintaining desired data is referred to as a refresh operation.

A memory cell of the DRAM is activated in an active mode. A bit-linesense-amplifier (sense-amp) circuit is configured to sense/amplify datareceived from the activated memory cell, and re-transmits the amplifieddata to a memory cell.

BRIEF SUMMARY OF THE INVENTION

Various embodiments of the present disclosure are directed to providinga semiconductor device that substantially obviates one or more problemsdue to limitations and disadvantages of the related art.

The embodiment of the present disclosure relates to a technology forstabilizing a bit-line precharge voltage by adjusting a level of apull-down power-supply line prior to operation of a sense-amplifier,resulting in reduction of a chip size of a semiconductor device.

In accordance with an embodiment of the present disclosure, asemiconductor device includes: a sense-amplifier configured toselectively control a connection between a pair of bit lines and a pairof sensing bit lines in response to a connection control signal withinan offset compensation period, and precharge a pull-down power-supplyline with a bit line precharge voltage level in the offset compensationperiod; and a pull-down voltage controller configured to increase avoltage of the pull-down power-supply line by a predetermined level inresponse to a pull-down control signal in the offset compensationperiod.

In accordance with another embodiment of the present disclosure, asemiconductor device includes: a plurality of sense-amplifiersconfigured to perform a sensing operation of a pair of sensing bit linesif a pair of bit lines is separated from the pair of sensing bit lineswithin a pre-sensing period; a plurality of mats, each of which includesa plurality of local bit lines and a plurality of global bit lines,wherein some parts of the plurality of local bit lines are coupled tothe plurality of sense-amplifiers through the plurality of global bitlines; and a switching circuit configured to control connection of theplurality of sense-amplifiers, the plurality of local bit lines, and theplurality of global bit lines in response to a switching signal.

In accordance with another embodiment of the present disclosure, asemiconductor device includes: a plurality of mats, each of whichincludes a plurality of local bit lines and a plurality of global bitlines; a plurality of sense-amplifiers located in both edge regions ofthe plurality of mats; a plurality of switching circuits located in gapregions interposed between the plurality of mats, and configured toselectively interconnect the plurality of global bit lines in responseto a row address having mat selection information; a plurality ofswitching groups located to correspond to the plurality of mats, andconfigured to selectively control connection of the plurality of localbit lines and the plurality of global bit lines; and a loading circuitlocated in both edge regions of the plurality of mats, and configured tocorrect loading of a contiguous sense-amplifier.

It is to be understood that both the foregoing general description andthe following detailed description of the present disclosure areexemplary and explanatory and are intended to provide furtherexplanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present disclosurewill become readily apparent by reference to the following detaileddescription when considered in conjunction with the accompanyingdrawings wherein:

FIG. 1 is a block diagram illustrating a representation of an example ofa semiconductor device according to an embodiment of the presentdisclosure.

FIG. 2 is a view illustrating a representation of an example of a layoutstructure of the semiconductor device shown in FIG. 1.

FIGS. 3 to 10 illustrate various examples of a pull-down voltagecontroller shown in FIG. 1.

FIG. 11 is a view illustrating a representation of an example of apull-down voltage controller shown in FIG. 1.

FIG. 12 is a view illustrating another example of the pull-down voltagecontroller shown in FIG. 1.

FIGS. 13 and 14 are timing diagrams illustrating representations ofexamples of operations of the semiconductor device according to anembodiment of the present disclosure.

FIG. 15 is a schematic view illustrating a representation of an exampleof a semiconductor device according to another embodiment of the presentdisclosure.

FIGS. 16 and 17 are schematic views illustrating a representation of anexample of a semiconductor device according to still another embodimentof the present disclosure.

DESCRIPTION OF EMBODIMENTS

Reference will now be made in detail to embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are usedthroughout the drawings to refer to the same or like portions.

FIG. 1 is a block diagram illustrating a representation of an example ofa semiconductor device according to an embodiment of the presentdisclosure.

Data stored in the data output buffer according to an embodiment of thepresent disclosure may be classified into a high level H and a low levelL in response to a voltage level, and the high-level data and thelow-level data may be denoted by “1” and “0”, respectively. In thiscase, such data values may be differentially classified into differentvalues according to a voltage level and a current magnitude. In the caseof binary data, a high level may be defined as a high voltage, and a lowlevel may be defined as a voltage lower than the high level. Inaddition, the NMOS transistor may be represented by a pull-down driveelement, and the PMOS transistor may be represented by a pull-up driveelement.

Referring to FIG. 1, the semiconductor device according to an embodimentof the present disclosure includes a sense-amplifier MCSA, a pull-updriver PUD, a pull-down driver PDD, and a pull-down voltage controller110. In this case, the sense-amplifier MCSA may be comprised of amismatch compensation sense amplifier.

As semiconductor devices progress and the degree of technology shrinks,there tends to be an increase in the amount of offset of thesense-amplifier MCSA. The mismatch compensation sense-amplifier (MCSA)structure may compensate for the amount of offset between latchtransistors.

The sense-amplifier MCSA may include a pull-up circuit 100, a pull-downcircuit 101, a precharge circuit 102, and a connection controller 103.

The pull-up driver 100 may include PMOS transistors P1 and P2. The PMOStransistors P1 and P2 may be coupled between a pull-up power-supply lineRTO and the pair of sensing bit lines SA_BLT and SA_BLB, such that gateterminals of the PMOS transistors P1 and P2 are cross-coupled to eachother. The pull-down circuit 101 may include NMOS transistors N1 and N2.The NMOS transistors N1 and N2 may be coupled between the pull-downpower-supply line SB and the pair of sensing bit lines SA_BLT andSA_BLB, and gate terminals of the NMOS transistors N1 and N2 are coupledto the pair of bit lines BLT and BLB. The pull-up circuit 100 and thepull-down circuit 101 may be configured in the form of a latchstructure, and may sense and amplify data of the pair of sensing bitlines SA_BLT and SA_BLB.

The precharge circuit 102 may include a plurality of NMOS transistorsN3˜N5. The NMOS transistor N3 may be coupled between the pair of sensingbit lines SA_BLT and SA_BLB. The NMOS transistors N4 and N5 may becoupled in series between the sensing bit lines SA_BLT and SA_BLB. Theplurality of NMOS transistors N3˜N5 may receive an equalization signalBLEQ through a common gate terminal.

Because the NMOS transistors N3˜N5 are turned on during activation of anequalization signal BLEQ, the precharge circuit 102 may precharge thepair of sensing bit lines SA_BLT and SA_BLB with a bit-line prechargevoltage (VBLP) level. In this case, the bit-line precharge voltage VBLPmay be half a power-supply voltage (or core voltage) VDD level. That is,the bit-line precharge voltage VBLP may be represented by ½ VDD level.

During the sensing operation, the sense-amplifier MCSA may disconnectthe pair of bit lines BLT and BLB from the pair of bit lines SA_BLT andSA_BLB based on operation of the connection controller 103. Theconnection controller 103 may include a plurality of NMOS transistorsN6˜N9. In this case, the NMOS transistors N6 and N7 may be switched by aconnection control signal ISO, and may selectively control connectionbetween the pair of bit lines BLT and BLB and the pair of sensing bitlines SA_BLT and SA_BLB. The NMOS transistors N8 and N9 may be switchedby a connection control signal MC, and may selectively controlconnection between the pair of bit lines BLT and BLB and the pair ofsensing bit lines SA_BLT and SA_BLB.

When the connection control signal ISO is activated, the bit line BLTmay be coupled to the sensing bit line SA_BLT, and the bit line bar BLBmay be coupled to the sensing bit line bar SA_BLB. In contrast, when theconnection control signal ISO is deactivated, connection between the bitline BLT and the sensing bit line may be severed, and connection betweenthe bit line bar BLB and the sensing bit line bar SA_BLB may be severed.

When the connection control signal MC is activated, the bit line BLT maybe coupled to the sensing bit line bar SA_BLB, and the bit line bar BLBmay be coupled to the sensing bit line SA_BLT. In contrast, when theconnection control signal MC is deactivated, connection between the bitline BLT and the sensing bit line bar SA_BLB may be severed, andconnection between the bit line bar BLB and the sensing bit line SA_BLTmay be severed.

The connection controller 103 may selectively sever a connection betweenthe pair of bit lines BLT and BLB and the pair of sensing bit linesSA_BLT and SA_BLB according to the connection control signals MC andISO. Therefore, the connection controller 103 may isolate a firstoperation of the pair of bit lines BLT and BLB from a second operationof the pair of sensing bit lines SA_BLT and SA_BLB, such that theconnection controller 103 may perform the first operation and the secondoperation separately from each other. Prior to execution of the sensingoperation, the connection controller 103 may selectively controlconnection between the pair of bit lines BLT and BLB and the pair ofsensing bit lines SA_BLT and SA_BLB, such that the connection controller103 may compensate for a mismatch of latch transistors contained in thepull-up circuit 100 and the pull-down circuit 101.

The pull-up driver PUD may pull up the pull-up power-supply line RTO toa power-supply voltage (VDD) level in response to a pull-up drive signalSAP. The pull-up driver PUD may include a PMOS transistor P3 that iscoupled between the power-supply voltage (VDD) input terminal and thepull-up power-supply line RTO and receives a pull-up drive signal SAPthrough a gate terminal.

The pull-down driver PDD may pull down the pull-down power-supply lineSB to a ground voltage (VSS) level in response to a pull-down drivesignal SAN. The pull-down driver PDD may include an NMOS transistor N10that is coupled between a pull-down power-supply line SB and a groundvoltage (VSS) input terminal and receives the pull-down drive signal SANthrough a gate terminal. In this case, the pull-down drive signal SANmay be activated during a predetermined time period according to acontrol signal such as an active signal, a precharge signal, or thelike.

In this case, each of the pull-up drive signal SAP and the pull-downdrive signal SAN may be activated during a predetermined time periodaccording to a control signal such as an active signal, a prechargesignal, or the like. The active signal may be activated after apredetermined time starting from a reception time of an active command,and the precharge signal may be activated after a predetermined timestarting from a reception time of a precharge command.

The pull-down voltage controller 110 may operate in an offsetcompensation period prior to operation of the sense-amplifier MCSA. Forexample, the sense-amplifier MCSA may selectively control a connectionbetween the pair of bit lines BLT and BLB and the pair of sensing bitlines SA_BLT and SA_BLB in response to at least one connection controlsignal MC or ISO within the offset compensation period. The offsetcompensation period may refer to a predetermined period in which thepair of sensing bit lines SA_BLT and SA_BLB are precharged to compensatefor the offset caused by mismatch of the pair of bit lines BLT and BLBprior to activation of word line(s). During the offset compensationperiod, the pair of sensing bit lines SA_BLT and SA_BLB may bemaintained at the bit line precharge voltage (VBLP) level.

However, during the offset compensation period, the bit line prechargevoltage VBLP may not maintain a normal level due to a threshold voltageand a resistance value of a latch transistor contained in thesense-amplifier MCSA, resulting in reduction of the bit line prechargevoltage (VBLP) level. In this case, power consumption of thesense-amplifier MCSA may be increased, and an offset margin between data“0” and data “1” may deteriorate.

Therefore, during the offset compensation period prior to the sensingperiod of the sense-amplifier MCSA, the pull-down voltage controller 110according to the embodiment of the present disclosure may increase avoltage level of the pull-down power-supply line SB by a predeterminedlevel in response to a pull-down control signal SAN2. Further, thesense-amplifier MCSA may precharge the pull-down power-supply line SBwith a bit line precharge voltage VBLP in the offset compensationperiod. As a result, a voltage level of the pull-down power-supply lineSB may increase prior to the sensing operation of the sense-amplifierMCSA, and thus may compensate for the bit line precharge voltage (VBLP)level to be lowered than a predetermined voltage.

FIG. 2 is a view illustrating a representation of an example of a layoutstructure of the semiconductor device shown in FIG. 1.

Referring to FIG. 2, the semiconductor device according to an embodimentof the present disclosure may include a mat MAT, a sub word line driverSWD, a sense-amplifier driver SAD, and a sense-amplifier array SA.

In this case, the mat MAT may include a cell in an intersection regionof the bit line BL and the word line WL, and the mat MAT may store datain the cell. The sub word line driver SWD may drive the word line WL toselect a row line. The sense-amplifier array SA may sense and amplifydata received from the mat MAT through the bit line BL. Thesense-amplifier driver SAD may generate not only drive signals forcontrolling operation of the sense-amplifier array SA, but also apower-supply signal.

In accordance with an embodiment, the sense-amplifier MCSA, the pull-updriver PUD, the pull-down driver PDD, and the pull-down voltagecontroller 110 illustrated in FIG. 1 may be contained in thesense-amplifier driver SAD. The pull-down power-supply line SB may bedriven by the pull-down voltage generated by the sense-amplifier driverSAD, and may be coupled to each sense-amplifier array SA.

FIGS. 3 to 10 illustrate various examples of the pull-down voltagecontroller shown in FIG. 1.

Referring to FIG. 3, the pull-down voltage controller 110 may includeNMOS transistors N11 and N12.

The NMOS transistor N11 and the NMOS transistor N12 may be coupled inseries between the pull-down power-supply line SB and the ground voltage(VSS) input terminal. The NMOS transistor N11 may be comprised of adiode structure in which a drain terminal and a gate terminal of theNMOS transistor N11 are commonly coupled to the pull-down power-supplyline SB. Accordingly, the NMOS transistor N11 may be coupled between thepull-down power-supply line SB and the NMOS transistor N12 such that adrain terminal and a gate terminal of the NMOS transistor N11 may becommonly coupled to each other. The NMOS transistor N12 may receive apull-down control signal SAN2 through a gate terminal thereof. Further,the NMOS transistor N12 may selectively provide the ground voltage VSSin response to the pull-down control signal SAN2.

When the NMOS transistor N12 is turned on by activation of the pull-downcontrol signal SAN2, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a predeterminedlevel. For example, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a thresholdvoltage of the NMOS transistor N11. That is, the level of the pull-downpower-supply line SB may be set to a desired target value by adjustingthe threshold voltage of the NMOS transistor N11.

The embodiment of the present disclosure may further include thepull-down driver PDD and the pull-down voltage controller 110, such thata level of the pull-down power-supply line SB may increase the pull-downpower-supply line (SB) level prior to the sensing operation. As aresult, the bit line precharge voltage VBLP may maintain a half value ofthe core voltage, such that the bit line precharge voltage VBLP can bestably maintained before the sensing operation.

Referring to FIG. 4, the pull-down voltage controller 110 may includeNMOS transistors N13 and N14.

The NMOS transistor N13 and the NMOS transistor N14 may be coupled inseries between the pull-down power-supply line SB and the ground voltage(VSS) input terminal. The NMOS transistor N13 may be coupled between thepull-down power-supply line SB and the NMOS transistor N14 and receive apull-down control signal SAN2 through a gate terminal thereof. The NMOStransistor N14 may be comprised of a diode structure in which a sourceterminal and a gate terminal of the NMOS transistor N14 are commonlycoupled to the ground voltage (VSS) input terminal.

When the NMOS transistor N13 is turned on by activation of the pull-downcontrol signal SAN2, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a predeterminedlevel. For example, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a thresholdvoltage of the NMOS transistor N14.

Referring to FIG. 5, the pull-down voltage controller 110 may include aPMOS transistor and an NMOS transistor N15.

In this case, the PMOS transistor P4 and the NMOS transistor N15 may becoupled in series between the pull-down power-supply line SB and theground voltage (VSS) input terminal. The PMOS transistor P4 may becoupled between pull-down power-supply line SB and the NMOS transistorN15, and the PMOS transistor P4 may be comprised of a diode structure inwhich a drain terminal and a gate terminal of the PMOS transistor P4 arecommonly coupled to each other. The NMOS transistor N15 may receive apull-down control signal SAN2 through a gate terminal thereof, and theNMOS transistor N15 may provide a ground voltage VSS in response to thepull-down control signal SAN2.

When the NMOS transistor N15 is turned on by activation of the pull-downcontrol signal SAN2, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a predeterminedlevel. For example, the pull-down voltage controller 110 may increase avoltage level of the pull-down power-supply line SB by a thresholdvoltage of the PMOS transistor P4. For example, the pull-down voltagecontroller 110 may increase a voltage level of the pull-downpower-supply line SB by a threshold voltage of the PMOS transistor P4.

Referring to FIG. 6, the pull-down voltage controller 110 may include aPMOS transistor P5 and an NMOS transistor N16.

In this case, the PMOS transistor P5 and the NMOS transistor N16 may becoupled in series between the pull-down power-supply line SB and theground voltage (VSS) input terminal. The PMOS transistor P5 may becoupled between the pull-down power-supply line SB and the NMOStransistor N16 to receive a back-bias voltage VBBW having a negativebias through a gate terminal thereof. The NMOS transistor N16 mayreceive a pull-down control signal SAN2 through a gate terminal thereof,and the NMOS transistor N16 may provide the ground voltage VSS inresponse to the pull-down control signal SAN2.

When the NMOS transistor N16 is turned on by activation of the pull-downcontrol signal SAN2, the pull-down voltage controller 110 may increasethe voltage level of the pull-down power-supply line SB by apredetermined level. For example, the pull-down voltage controller 110may adjust a bias-voltage level of the back-bias voltage VBBW applied toa gate terminal of the PMOS transistor P5. Therefore, a voltage level ofthe pull-down power-supply line SB can be increased by the driving powerof the PMOS transistor P5.

Referring to FIG. 7, the pull-down voltage controller 110 may include anNMOS transistor N17 and a PMOS transistor P6.

In this case, the NMOS transistor N17 and the PMOS transistor P6 may becoupled in series between the pull-down power-supply line SB and theground voltage (VSS) input terminal. The NMOS transistor N17 may becoupled between pull-down power-supply line SB and the PMOS transistorP6 to receive a pull-down control signal SAN2 through a gate terminalthereof. The PMOS transistor P6 may receive a back-bias voltage VBBWthrough a gate terminal thereof. Further, the PMOS transistor P6 mayprovide the ground voltage VSS in response to the back-bias voltage VBBWhaving a negative bias.

When the NMOS transistor N17 is turned on by activation of the pull-downcontrol signal SAN2, the pull-down voltage controller 110 may increasethe voltage level of the pull-down power-supply line SB by apredetermined level. For example, the pull-down voltage controller 110may receive a back-bias voltage VBBW having a negative bias-voltagelevel through a gate terminal of the PMOS transistor P6, and may thusincrease a voltage level of the pull-down power-supply SB by apredetermined level.

Referring to FIG. 8, the pull-down voltage controller 110 may include apull-down driver 111 and a voltage generator 112.

In this case, the pull-down driver 111 may include an NMOS transistorN18. The NMOS transistor N18 may be coupled between the pull-downpower-supply line SB and a drive voltage (VXX) node, and may thusreceive a pull-down control signal SAN2 through a gate terminal thereof.The pull-down drive driver 111 may provide the drive voltage VXX to thepull-down power-supply line SB in response to the pull-down controlsignal SAN2.

The voltage generator 112 may generate a drive voltage VXX higher than areference voltage VXX_REF, such that the generated drive voltage VXX maybe provided as a source bias voltage to the pull-down power-supply lineSB. In this case, the drive voltage VXX may be adjusted in response tothe reference voltage VXX_REF or a regulation voltage Vreg, such thatthe drive voltage VXX may be adjusted within a specific range.

Therefore, when the pull-down driver 111 is turned on by activation ofthe pull-down control signal SAN2, the voltage level of the pull-downpower-supply line SB may increase by a predetermined level uponreceiving the drive voltage VXX from the voltage generator 112.

The voltage generator 112 may include a plurality of resistors R1 andR2, a comparator 113, NMOS transistors N18 and N19, and a switchingcircuit 114. The resistors R1 and R2 may be coupled in series between aregulation voltage (Vreg) input terminal and the drive voltage (VXX)node. The comparator 113 may compare a division voltage received from acommon connection node of the resistors R1 and R2 with the referencevoltage VXX_REF, and may thus output the result of comparison to theNMOS transistors N18 and N19.

The NMOS transistor N18 may be coupled between the drive voltage (VXX)node and the ground voltage (VSS) input terminal, and may receive anoutput signal of the comparator 113 through a gate terminal thereof. Theswitching circuit 114 may selectively output the output signal of thecomparator 113 to the NMOS transistor N18 in response to a switchingcontrol signal SW_C. The NMOS transistor N19 may be coupled between thedrive voltage (VXX) node and the back-bias voltage (VBB) input terminal,and may thus receive the output signal of the switching circuit 114through a gate terminal thereof.

For example, when the drive voltage VXX is higher than the referencevoltage VXX_REF, the output signal of the comparator 113 is a logic highlevel, such that the NMOS transistors N18 and N19 are turned on. As aresult, a voltage of the pull-down power-supply line SB may increase bya predetermined level according to the drive voltage VXX.

In this case, when the switching circuit 114 does not operate bydeactivation of the switching control signal SW_C, only the NMOStransistor N18 may be turned on. In contrast, when the switching circuit114 operates by activation of the switching control signal SW_C, theNMOS transistors N18 and N19 are turned on, such that the drive voltageVXX may be more rapidly driven.

Referring to FIG. 9, the pull-down voltage controller 110 may include aPMOS transistor P7, an NMOS transistor N20, a constant current source115, and a capacitor C1.

The PMOS transistor P7 may be coupled between the pull-down power-supplyline SB and the constant current source 115 to receive a back-biasvoltage VBBW through a gate terminal thereof. The back-bias voltage VBBWmay have a negative voltage level.

The constant current source 115 may output a constant current having apredetermined level to the NMOS transistor N20. The NMOS transistor N20may be coupled between the constant current source 115 and the groundvoltage (VSS) input terminal, and may receive a pull-down control signalSAN2 through a gate terminal thereof. A capacitor C1 may be coupledbetween the ground voltage (VSS) input terminal and a common connectionnode of the PMOS transistor P7 and the constant current source.

The PMOS transistor P7 may be turned on by the back-bias voltage VBBW.The NMOS transistor N20 may be turned on by activation of the pull-downcontrol signal SAN2. As a result, when a predetermined constant currentflows in the constant current source 115, the voltage level of thepull-down power-supply line SB may increase by a predetermined levelaccording to a current charged in the capacitor C1.

Referring to FIG. 10, the pull-down voltage controller 110 may include acomparator 116 and an NMOS transistor N21.

In this case, the comparator 116 may compare a voltage of the pull-downpower-supply line SB with the reference voltage VXX_REF, and may thusoutput a pull-down control signal SAN2 according to the result ofcomparison. The comparator 116 may control a pulse width of thepull-down control signal SAN2 according to the result of comparisonbetween the pull-down power-supply line (SB) voltage and the referencevoltage VXX_REF. The NMOS transistor N21 may be coupled between thepull-down power-supply line SB and the ground voltage (VSS) inputterminal, and may thus receive the pull-down control signal SAN2 througha gate terminal thereof. That is, the pulse width of the pull-downcontrol signal SAN2 may be adjusted according to a level variation ofthe output signal of the comparator 116.

For example, when the pull-down power-supply line (SB) voltage is higherthan the reference voltage VXX_REF, the output signal of the comparator116 is at a logic high level, such that the pull-down control signalSAN2 may be activated. As a result, the NMOS transistor N21 is turnedon, such that the pull-down power-supply line (SB) voltage may increaseby a predetermined level. In contrast, when the pull-down power-supplyline (SB) voltage is less than the reference voltage VXX_REF, the outputsignal of the comparator 116 is at a logic low level, such that thepull-down control signal SAN2 may be deactivated.

That is, a disable time of the pull-down control signal SAN2 may beadjusted according to the result of a comparison between the pull-downpower-supply line (SB) voltage and the reference voltage VXX_REF. As aresult, the pulse width of the pull-down control signal SAN2 isadjusted, such that the NMOS transistor N21 is turned off before thepull-down power-supply line (SB) is completely pulled down to the groundvoltage (VSS) level.

FIG. 11 is a view illustrating a representation of an example of alayout structure of the pull-down voltage controller 110 shown in FIG.10.

Referring to FIG. 11, the pull-down voltage controller 110 shown in FIG.10 may control a turn-on or turn-off time of the NMOS transistor N21 bydetecting a voltage level of the pull-down power-supply line SB.

For this purpose, the pull-down voltage controller 110 shown in FIG. 10may be located in a row decoder XDEC as illustrated in FIG. 11. That is,the pull-down voltage controller 110 must detect the voltage level ofthe pull-down power-supply line (SB), such that the pull-down voltagecontroller 110 may be located in the row decoder XDEC located adjacentto the sense-amplifier array SA. The row decoder XDEC may be located inan edge region of one side of the bank.

Referring to FIG. 12, the pull-down voltage controller 110 may include aplurality of delay circuits D1 and D2, a combination circuit 118, and anNMOS transistor N22.

In this case, the plurality of delay circuits D1 and D2 may delay asensing enable signal SAEN2 by a predetermined time, and may output thedelayed sensing enable signal SAEN2.

The combination circuit 118 may output the pull-down control signal SAN2by performing a logic operation between the output signal of the sensingenable signal SAEN2 and the output signal of the delay circuit D2. Thecombination circuit 118 may activate the pull-down control signal SAN2when the output signal of the sensing enable signal SAEN2 and the outputsignal of the delay circuit D2 are at a logic high level. Thecombination circuit 118 may output the pull-down control signal SAN2 bycombining sensing enable signal SAEN2 and the output signals of theplurality of delay circuits D1 and D2.

The combination circuit 118 may include a NAND gate ND1 and an inverterIV1. The NAND gate ND1 may perform a NAND operation between the outputsignal of the sensing enable signal SAEN2 and the output signal of thedelay circuit D2. The inverter IV1 may output the pull-down controlsignal SAN2 by inverting the output signal of the NAND gate ND1. TheNMOS transistor N22 may be coupled between the pull-down power-supplyline SB and the ground voltage (VSS) input terminal, and may thusreceive the pull-down control signal SAN2 through a gate terminalthereof.

The pull-down voltage controller 110 may variably control the pulsewidth of the pull-down control signal SAN2 in response to delay times ofthe delay circuits D1 and D2. That is, the pull-down voltage controller110 may adjust a disable time of the pull-down control signal SAN2according to the delay times of the delay circuits D1 and D2.

For example, when the output signal of the sensing enable signal SAEN2and the output signal of the delay circuit D2 are at a logic high level,the pull-down control signal SAN2 is activated, such that the pull-downpower-supply line (SB) voltage may increase by a predetermined level. Incontrast, when any one of the output signal of the sensing enable signalSAEN2 and the output signal of the delay circuit D2 is at a logic lowlevel, the pull-down control signal SAN2 may be deactivated and the NMOStransistor N22 may remain turned off.

In addition, as shown in FIG. 12, the embodiment of the presentdisclosure may further include a pull-up drive element PUD1. The pull-updrive element PUD1 may pull up the pull-up power-supply line RTO to apower-supply voltage (VDD) level in response to the pull-up drive signalSAP2. The pull-up drive signal SAP2 is the output signal of the NANDgate ND1.

The pull-up drive element PUD1 may include a PMOS transistor P10 that iscoupled between the power-voltage (VDD) input terminal and the pull-uppower-supply line RTO and receives a pull-up drive signal SAP2 through agate terminal. When the output signal of the NAND gate ND1 is at a logiclow level, the PMOS transistor P10 is turned on, such that a voltagelevel of the pull-up power-supply line RTO may increase.

The embodiment of the present disclosure may drive both the pull-updrive element PUD and the pull-up drive element PUD1 in the offsetcompensation period. Accordingly, the current drivability of the PMOStransistors P3 and P10 may be improved to increase the voltage level ofthe pull-up power-supply line RTO.

FIGS. 13 and 14 are timing diagrams illustrating representations ofexamples of operations of the semiconductor device according to anembodiment of the present disclosure.

Referring to FIG. 13, the word line WL may remain disabled in an offsetcompensation period T1. That is, the offset compensation period T1 maycompensate for a mismatch of the pair of the sensing bit lines SA_BLTand SA_BLB in a time period before the word line WL is enabled.

In the offset compensation period T1, the pull-up power-supply line RTOis at a logic high level and the pull-down power-supply line SB is at alogic low level, such that the sense-amplifier MCSA is powered on.Because a connection control signal MC is at a logic high level and aconnection control signal ISO is at a logic low level, the bit line BLTis coupled to the sensing bit line bar SA_BLB, and the bit line bar BLBis coupled to the sensing bit line SA_BLT prior to activation of a wordline WL. Therefore, the pair of the sensing bit lines SA_BLT and SA_BLBmay be precharged in the offset compensation period T1, such that thepair of the sensing bit lines SA_BLT and SA_BLB may remain at the bitline precharge voltage (VBLP) level during the offset compensationperiod T1.

Thereafter, during a pre-sensing period T2, electric charges of the pairof the sensing bit lines SA_BLT and SA_BLB may increase by apredetermined level before arriving at the pair of bit lines BLT andBLB, such that the sensing operation of the pair of the bit lines BLTand BLB can be rapidly carried out.

If the word line WL is activated in the pre-sensing period T2, all theconnection control signals MC and ISO may be deactivated. As a result,the connection controller 103 is turned off, such that the pair of thebit lines BLT and BLB may be disconnected from the pair of the sensingbit lines SA_BLT and SA_BLB. In the pre-sensing period T2, the pair ofthe bit lines BLT and BLB and the pair of the sensing bit lines SA_BLTand SA_BLB may have different waveforms.

In the pre-sensing period T2, the pull-up power-supply line RTO may beat a logic high level, and the pull-down power-supply line SB may be ata logic low level. The pre-sensing operation of the pair of the sensingbit lines SA_BLT and SA_BLB is carried out when the sense-amplifier MCSAis powered on, such that development of charges of the pair of thesensing bit lines SA_BLT and SA_BLB may be started.

In the operation period of the sense-amplifier MCSA after lapse of thepre-sensing period T2, charges of the pair of the bit lines BLT and BLBmay be shared. In the operation period of the sense-amplifier MCSA, theconnection control signal ISO is activated, such that the bit line BLTmay be coupled to the sensing bit line SA_BLT and the bit line bar BLBmay be coupled to the sensing bit line bar SA_BLB. That is, during thepre-sensing period T2, the sensing operation of the pair of the sensingbit lines SA_BLT and SA_BLB contained in the sense-amplifier MCSA isfirst carried out, and the sensing operation of the pair of the bitlines BLT and BLB is then carried out after lapse of the pre-sensingperiod T2, resulting in implementation of data storage.

Thereafter, when the bit line equalization signal BLEQ is activated, theprecharge circuit 102 of the sense-amplifier MCSA may be precharged withthe bit line precharge voltage (VBLP) level. When the word line WL isdeactivated, a row cycle time (tRC) period is terminated.

However, in the offset compensation period T1, the bit line prechargevoltage (VBLP) level may be reduced by a resistance component of thepull-up circuit 100 and a threshold voltage of each transistor of thepull-down circuit 101 contained in the sense-amplifier MCSA.Specifically, the bit line precharge voltage (VBLP) level may be reducedwhen threshold voltages of the NMOS transistors N1 and N2 of thepull-down circuit 101 are low.

That is, the precharge voltage level may not be stably maintained, andthe bit line precharge voltage (VBLP) level may be reduced as shown byreference symbol (A) of FIG. 13. As a result, if the bit line prechargevoltage (VBLP) level is less than a half of the core voltage, powerconsumption may unavoidably increase.

Therefore, as can be seen from FIG. 14, when the pull-down controlsignal SAN2 is activated in the offset compensation period T1, a voltagelevel of the pull-down power-supply line SB may increase by apredetermined level as shown by reference symbol (B) of FIG. 14. Thatis, a voltage level of the pull-down power-supply line SB acting as asource bias of the pull-down circuit 101 is increased, such that thepull-down power-supply line SB may remain at the bit line prechargevoltage (VBLP) level as shown by reference symbol (C) of FIG. 14.

In addition, when the pull-up drive signal SAP2 is activated in theoffset compensation period T1, a voltage level of the pull-uppower-supply line RTO may increase by a predetermined level as shown byreference symbol (E) of FIG. 14. That is, a voltage level of the pull-uppower-supply line RTO is increased, such that the pull-up power-supplyline RTO may remain at the bit line precharge voltage (VBLP) level.

In this case, in the offset compensation period T1, a pulse width D3 ofthe pull-down control signal SAN2 is adjusted such that a voltage levelof the pull-down power-supply line SB may also be adjusted. That is,according to the embodiments of FIGS. 10 to 12, a pulse width of thepull-down control signal SAN2 is adjusted such that a voltage level ofthe pull-down power-supply line SB may be established. In thepre-sensing period T2, the pull-down drive signal SAN is activated, suchthat the pull-down power-supply line SB may be pulled down to the groundvoltage (VSS) level.

FIG. 15 is a schematic view illustrating a representation of an exampleof a semiconductor device according to another embodiment of the presentdisclosure.

Referring to FIG. 15, a semiconductor device may include a plurality ofmats MAT1˜MAT3, a plurality of sense-amplifiers MCSA1˜MCSA4, a loadingcircuit 210, and a plurality of switching circuits 220˜240.

The plurality of mats MAT1˜MAT3 may be respectively coupled to theplurality of sense-amplifiers MCSA1˜MCSA4 through a local bit line and aglobal bit line, resulting in formation of a hierarchical bit linestructure. That is, the mat MAT1 may be coupled to local bit lines LBL0a˜LBL3 a and odd global bit lines GBL1 and GBL3. The mat MAT2 may becoupled to local bit lines LBL0 b˜LBL3 b and even global bit lines GBL0and GBL2. The first mat MAT1 may be located adjacent to the second matMAT2. In addition, the mat MAT3 may be coupled to local bit lines LBL0c˜LBL3 c and global bit lines GBL4 and GBL5.

In this case, the odd local bit lines LBL1 a and LBL3 a of the mat MAT1may be coupled to the sense-amplifiers MCSA1 and MCSA2 through theswitching circuit 220. The even local bit lines LBL0 a and LBL2 a of themat MAT1 may be respectively coupled to the sense-amplifiers MCSA3 andMCSA4 through the even global bit lines GBL0 and GBL2. The odd globalbit lines GBL1 and GBL3 may be located in the mat MAT1, and the evenglobal bit lines GBL0 and GBL2 may be located in the mat MAT2.

Therefore, the odd local bit lines LBL1 a and LBL3 a of the mat MAT1 maybe coupled to contiguous sense-amplifiers MCSA1 and MCSA2. In contrast,the even local bit lines LBL0 a and LBL2 a of the mat MAT1 may berespectively coupled to the sense-amplifiers MCSA3 and MCSA4 through theeven global bit lines GBL0 and GBL2 and the switching circuit 230.

The even local bit lines LBL0 b and LBL2 b of the mat MAT2 may becoupled to the sense-amplifiers MCSA3 and MCSA4 through the switchingcircuit 230. The odd local bit lines LBL1 b and LBL3 b of the mat MAT2may be respectively coupled to the sense-amplifiers MCSA1 and MCSA2through the odd global bit lines GBL1 and GBL3.

Therefore, the even local bit lines LBL0 b and LBL2 b of the mat MAT2may be coupled to contiguous sense-amplifiers MCSA3 and MCSA4. Incontrast, the odd local bit lines LBL1 b and LBL3 b of the mat MAT2 maybe coupled to the sense-amplifiers MCSA1 and MCSA2 through the switchingcircuit 220 and respectively the odd global bit lines GBL1 and GBL3.

The switching circuit 220 may selectively control a connection betweenthe mat MAT1 and the sense-amplifiers MCSA1 and MCSA2 in response to theswitching signals SW0L and SW1L. The switching circuit 220 may include aplurality of switching elements SW1˜SW4. In this case, the switchingelements SW1 and SW2 may selectively control connection of thesense-amplifiers MCSA1 and MCSA2 and the odd global bit lines GBL1 andGBL3 in response to the switching signal SW0L. The switching elementsSW3 and SW4 may selectively control connection of the sense-amplifiersMCSA1 and MCSA2 and the respective odd local bit lines LBL1 a and LBL3 ain response to the switching signal SW1L.

The switching circuit 230 may selectively control a connection betweenthe mat MAT2 and the sense-amplifiers MCSA3 and MCSA4 in response to theswitching signals SW0C and SW1C. The switching circuit 230 may include aplurality of switching elements SW5˜SW8. In this case, the switchingelements SW5 and SW6 may selectively control connection of thesense-amplifiers MCSA3 and MCSA4 and the even local bit lines LBL0 a andLBL2 a in response to the switching signal SW0C. The switching elementsSW7 and SW8 may selectively control connection of the sense-amplifiersMCSA3 and MCSA4 and the respective even global bit lines GBL0 and GBL2in response to the switching signal SW1C.

In addition, the switching circuit 240 may selectively control aconnection between the mat MAT3 and the sense-amplifiers MCSA3 and MCSA4in response to the switching signals SW0R and SW1R. The switchingcircuit 240 may include a plurality of switching elements SW9˜SW12. Inthis case, the switching elements SW9 and SW10 may selectively controlconnection of the sense-amplifiers MCSA3 and MCSA4 and the global bitlines GBL4, GBL5 in response to the switching signal SW0R. The switchingelements SW11 and SW12 may selectively control connection of thesense-amplifiers MCSA3 and MCSA4 and the respective odd local bit linesLBL1C and LBL3C in response to the switching signal SW1R.

The loading circuit 210 may provide a reference voltage when thesense-amplifiers MCSA3 and MCSA4 are operated. The loading circuit 210may include a capacitor C2 coupled to the sense-amplifier MCSA3 and acapacitor C3 coupled to the sense-amplifier MCSA4. For example, when theodd global bit lines GBL1 and GBL3 of the mat MAT1 are selected or theodd local bit lines LBL1 a and LBL3 a are selected, the loading circuit210 may operate by the reference lines GBL1B and GBL3B.

For example, it is assumed that the word line WL of the mat MAT2 isactivated. As a result, the even local bit lines LBL0 b and LBL2 b maybe coupled to the contiguous sense-amplifiers MCSA3 and MCSA4 throughthe switching circuit 230. The odd local bit lines LBL1 b and LBL3 b maybe coupled to the contiguous sense-amplifiers MCSA1 and MCSA2 throughthe switching circuit 220 and the odd global bit lines GBL1 and GBL3.

In this case, the odd local bit lines LBL1 b and LBL3 b may not becoupled to the contiguous sense-amplifiers MCSA3 and MCSA4, and may becoupled to the sense-amplifiers MCSA1 and MCSA2 through the odd globalbit lines GBL1 and GBL3. Accordingly, the even local bit lines LBL0 band LBL2 b of the mat MAT2 and the odd local bit lines LBL1 b and LBL3 bof the mat MAT2 may have different lengths. That is, the odd local bitlines LBL1 b and LBL3 b may have a longer loading time as compared tothe even local bit lines LBL0 b and LBL2 b.

In a general sense-amplifier, a loading time of the bit line BLT must beidentical to a loading time of the bit line bar BLB, such that offsetdeterioration does not occur. However, according to an embodiment of thepresent disclosure, the pair of bit lines BLT and BLB of the cell regionis separated from the pair of sensing bit lines SA_BLT and SA_BLB of thesense-amplifier MCSA region as shown in FIG. 1, such that a differencein loading between the sensing bit line and a reference bit line neednot be considered. According to the sense-amplifier MCSA of anembodiment of the present disclosure, the operation of the pair of bitlines BLT and BLB may be separated from the operation of the pair ofsensing bit lines SA_BLT and SA_BLB during the pre-sensing period T2.

That is, charge division of the pair of the sensing bit lines SA_BLT andSA_BLB may first be performed during the pre-sensing period T2, andcharge division of the pair of the bit lines BLT and BLB may then beperformed after lapse of the pre-sensing period T2. In the pre-sensingperiod T2, at least one sense-amplifier MCSA may perform the sensingoperation of only the pair of the sensing bit lines SA_BLT and SA_BLB ifthe pair of bit lines BLT and BLB are separated from the pair of sensingbit line SA_BLT and SA_BLB. Therefore, mismatch caused by loading of thepair of the bit lines BLT and BLB may not affect the operation of thesense-amplifier MCSA.

When there is a difference in loading between the bit lines BLT and BLBin the general sense-amplifier, an offset caused by a difference inloading between the bit lines BLT and BLB may increase. However, anembodiment of the present disclosure may include the sense-amplifierMCSA structure in which loading between a true line and a bar line neednot be matched as shown in FIG. 1.

In accordance with an embodiment of the present disclosure, the sensingoperation is achieved only in the sense-amplifier MCSA during thepre-sensing period T2, and loading of the pair of bit lines BLT and BLBis re-connected after lapse of the pre-sensing period T2. An embodimentof the present disclosure may improve the sense-amplifier offset causedby a loading mismatch between the bit lines at an early stage of thesensing operation.

Therefore, an embodiment of the present disclosure may not include anadditional dummy region in an edge region of the bank having an open bitline structure. That is, an embodiment of the present disclosureincludes a relatively small-sized loading circuit 210 instead ofadditional dummy cells to form a reference line needed to correctloading of the bit line, such that the entire region can be reduced insize and the sensing margin can be improved. In other words, the loadingcircuit 210 located in an edge region of the first mat MAT1 may correctloading of at least one sense-amplifier MCSA1 and MSCA2 adjacent to thefirst mat MAT1.

FIG. 16 is a schematic view illustrating a representation of an exampleof a semiconductor device according to another embodiment of the presentdisclosure.

Referring to FIG. 16, a semiconductor device 200 may include a pluralityof mats MAT1˜MAT3, a plurality of sense-amplifiers MCSA1˜MCSA4, and aplurality of switching circuits 250˜270.

The plurality of mats MAT1˜MAT3 may be coupled to the plurality ofsense-amplifiers MCSA1˜MCSA4 through a local bit line and a global bitline. That is, the global bit line may be used to connect the respectivelocal bit lines to the sense-amplifiers MCSA1˜MCSA4.

The mat MAT1 may be coupled to the local bit lines LBL0B˜LBL3B and theglobal bit lines GBL1T and GBL3T. The mat MAT2 may be coupled to thelocal bit lines LBL0T˜LBL3T and the global bit lines GBL0B and GBL2B.The first mat MAT1 may be adjacent to the second mat MAT2. The mat MAT3may be coupled to local bit lines LBL0 c˜LBL3 c and the global bit linesGBL4 and GBL5.

In this case, the local bit lines LBL1B and LBL3B of the mat MAT1 may berespectively coupled to the sense-amplifiers MCSA1 and MCSA2 through theswitching circuit 250. The local bit lines LBL0B and LBL2B of the matMAT1 may be respectively coupled to the sense-amplifiers MCSA3 and MCSA4through the global bit lines GBL0B and GBL2B. The global bit lines GBL1Tand GBL3T may be located in the mat MAT1, and the global bit lines GBL0Band GBL2B may be located in the mat MAT2.

Therefore, the local bit lines LBL1B and LBL3B of the mat MAT1 may berespectively coupled to the contiguous sense-amplifiers MCSA1 and MCSA2.In contrast, the local bit lines LBL0B and LBL2B of the mat MAT1 may berespectively coupled to the sense-amplifiers MCSA3 and MCSA4 through theswitching circuit 260 and the global bit lines GBL0B and GBL2B.

The local bit lines LBL0T and LBL0T of the mat MAT2 may be respectivelycoupled to the sense-amplifiers MCSA3 and MCSA4 through the switchingcircuit 260. The local bit lines LBL1T and LBL3T of the mat MAT2 may berespectively coupled to the sense-amplifiers MCSA1 and MCSA2 through theglobal bit lines GBL1T and GBL3T.

Therefore, the local bit lines LBL0T and LBL0T of the mat MAT2 may berespectively coupled to the contiguous sense-amplifiers MCSA3 and MCSA4.In contrast, the local bit lines LBL1T and LBL3T of the mat MAT2 may berespectively coupled to the sense-amplifiers MCSA1 and MCSA2 through theswitching circuit 250 and the global bit lines GBL1T and GBL3T.

The switching circuit 250 may selectively control a connection betweenthe mat MAT1 and the sense-amplifiers MCSA1 and MCSA2 in response to theswitching signal SWC0. The switching circuit 250 may include a pluralityof switching elements SW13˜SW16. In this case, the switching elementsSW13 and SW15 may selectively control connection of the sense-amplifiersMCSA1 and MCSA2 and the respective global bit lines GBL1T and GBL3T inresponse to the switching signal SWC0. The switching elements SW14 andSW16 may selectively control connection of the sense-amplifiers MCSA1and MCSA2 and the respective local bit lines LBL1B and LBL3B in responseto the switching signal SWC0.

The switching circuit 260 may selectively control connection between themat MAT2 and the sense-amplifiers MCSA3 and MCSA4 in response to theswitching signal SWC1. The switching circuit 260 may include a pluralityof switching elements SW17˜SW20. In this case, the switching elementsSW17 and SW19 may selectively control connection of the sense-amplifiersMCSA3 and MCSA4 and the respective local bit lines LBL0T and LBL0T inresponse to the switching signal SWC1. The switching elements SW18 andSW20 may selectively control connection of the sense-amplifiers MCSA3and MCSA4 and the respective global bit lines GBL0B and GBL0B inresponse to the switching signal SWC1.

In addition, the switching circuit 270 may selectively control aconnection between the mat MAT3 and the sense-amplifiers MCSA3 and MCSA4in response to the switching signal SWC2. The switching circuit 270 mayinclude a plurality of switching elements SW21˜SW24. In this case, theswitching elements SW21 and SW23 may selectively control connection ofthe sense-amplifiers MCSA3 and MCSA4 and the respective global bit linesGBL4 and GBL5 in response to the switching signal SWC2. The switchingelements SW22 and SW24 may selectively control connection of thesense-amplifiers MCSA3 and MCSA4 and the respective local bit linesLBL1C and LBL3C in response to the switching signal SWC2.

In the above-mentioned description, “T” may refer to a true bit line,and “B” may refer to a false bit line. For example, it is assumed thatthe word line WL of the mat MAT2 is activated. As a result, theswitching signal SWC2 is activated, such that the sense-amplifiers MCSA3and MCSA4 can operate.

The local bit lines LBL0T and LBL2T may be respectively coupled to thecontiguous sense-amplifiers MCSA3 and MCSA4 through the switchingcircuit 260, such that the local bit lines LBL0T and LBL2T may operateas the true bit lines. The local bit lines LBL0B and LBL2B may berespectively coupled to the global bit lines GBL0B and GBL0B may operateas the false bit lines when the sense-amplifiers MCSA3 and MCSA4 areoperated.

That is, a single sense-amplifier MCSA1 may operate for every two matsMAT1 and MAT2. From the viewpoint of the mat MAT2, the local bit linesLBL0T and LBL2T located in the mat MAT2 may operate as true bit lines,and local bit lines LBL0B and LBL2B located in the contiguous mat MAT1may operate as false bit lines such that the mat MAT2 can operate as areference.

FIG. 16 is a view illustrating an example of the open bit line structureto which a folded bit line sensing operation is applied. As can be seenfrom the embodiment of FIG. 16, because the bit line of the contiguousmat is used as a false bit line, an additional loading circuit 210 neednot be used as compared to the example of FIG. 15.

Although the local bit line LBL0T of the mat MAT2 is independentlycoupled to the sense-amplifier MCSA3, the local bit line LBL0B of themat MAT1 is coupled to the sense-amplifier MCSA3 through the global bitline GBL0B, such that it is not always necessary for all the gap regionsbetween the mats to include a sense-amplifier. As a result, the numberof sense-amplifiers is reduced such that the entire bank region can alsobe reduced in size.

FIG. 17 is a schematic view illustrating a representation of an exampleof a semiconductor device according to another embodiment of the presentdisclosure.

Referring to FIG. 17, the semiconductor device 200 may include aplurality of mats MAT1˜MAT4, a plurality of sense-amplifiersMCSA0˜MCSA3, loading circuits 280 and 290, a plurality of switchingcircuits 300˜330, and a plurality of switching groups G1˜G4.

The plurality of mats MAT1˜MAT4 may be coupled to the plurality ofsense-amplifiers MCSA0˜MCSA3 through a local bit line and a global bitline. That is, the mat MAT1 may be coupled to the local bit lines LBL0a˜LBL3 a and the global bit lines GBL0 and GBL2. The mat MAT2 may becoupled to the local bit lines LBL0 b˜LBL3 b and the global bit linesGBL1 and GBL3. In addition, the mat MAT3 may be coupled to the local bitlines LBL0 c˜LBL3 c and the global bit lines GBL1 and GBL3. In addition,the mat MAT4 may be coupled to the local bit lines LBL0 d˜LBL3 d and theglobal bit lines GBL1 and GBL3.

The global bit lines GBL0 and GBL2 may be respectively coupled to thecontiguous sense-amplifiers MCSA0 and MCSA2 through the mat MAT1. Theglobal bit lines GBL1 and GBL3 may be respectively coupled to thesense-amplifiers MCSA1 and MCSA3 through the mats MAT2˜MAT4. Thesense-amplifiers MCSA0 and MCSA2 may be located in one edge region ofthe mat MAT1. The sense-amplifiers MCSA1 and MCSA3 may be located in oneedge region of the mat MAT4.

The switching circuits 300 and 310 may be located in a gap regioninterposed between the mat MAT1 and the other mat MAT2. The switchingcircuit 300 may control connection between the global bit line GBL0 andthe other global bit line GBL1 in response to a row address XADDincluding mat selection information. In addition, the switching circuit310 may control connection between the global bit line GBL2 and theglobal bit line GBL3 in response to the row address XADD.

The switching circuits 320 and 330 may be located in a gap regioninterposed between the mat MAT3 and the other mat MAT4. The switchingcircuit 320 may control connection between the global bit line GBL1 ofthe mat MAT3 and the global bit line GBL1 of the mat MAT4 in response tothe row address XADD. In addition, the switching circuit 330 may controlconnection between the global bit line GBL3 of the mat MAT3 and theglobal bit line GBL3 of the mat MAT4 in response to the row addressXADD.

The plurality of switching groups G1˜G4 may selectively controlconnection of the local bit lines and the global bit lines in responseto the row address XADD. That is, the switching group G1 may controlconnection of the local bit lines LBL0 a˜LBL3 a and the global bit linesGBL0˜GBL3. The switching group G2 may control connection of the localbit lines LBL0 b˜LBL3 b and the global bit lines GBL0˜GBL3. Theswitching group G3 may control connection of the local bit lines LBL0c˜LBL3 c and the global bit lines GBL0˜GBL3. In addition, the switchinggroup G4 may control connection of the local bit lines LBL0 d˜LBL3 d andthe global bit lines GBL0˜GBL3.

The loading circuit 280 may provide a reference voltage during operationof the sense-amplifiers MCSA0 and MCSA2. The loading circuit 280 mayinclude a capacitor C4 coupled to the sense-amplifier MCSA0 and acapacitor C6 coupled to the sense-amplifier MCSA2.

If the global bit line GBL0 of the mat MAT1 is selected, the referenceline GBL0B coupled to the capacitor C4 may operate. In addition, if theglobal bit line GBL2 of the mat MAT1 is selected, the reference lineGBL0B coupled to the capacitor C6 may operate.

In addition, the loading circuit 290 may provide a reference voltageduring operation of the sense-amplifiers MCSA1 and MCSA3. The loadingcircuit 290 may include a capacitor C5 coupled to the sense-amplifierMCSA1 and a capacitor C7 coupled to the sense-amplifier MCSA3.

If the global bit lines GBL1 of the mats MAT2˜MAT4 are selected, thereference line GBL1B coupled to the capacitor C5 may operate. If theglobal bit lines GBL3 of the mats MAT2˜MAT4 are selected, the referenceline GBL3B coupled to the capacitor C7 may operate.

As can be seen from the embodiment of FIG. 17, the sense-amplifier isnot always located in all the gap regions disposed between the matsMAT1˜MAT4, the sense-amplifiers MCSA0 and MCSA2 are located in an edgeregion of the first mat MAT1, and the sense-amplifiers MCSA1 and MCSA3are located in an edge region of the last mat MAT4. In addition, onlythe switching circuits 300˜330 may be located in the gap regionsinterposed between the plurality of mats MAT1˜MAT4.

For example, it is assumed that the word line WL of the mat MAT1 isactivated. If the mat MAT1 corresponding to the row address XADD isselected, only the switching group G1 corresponding to the selected matMAT1 from among the plurality of switching groups G1˜G4 is turned on,and the remaining switching groups G2˜G4 are turned off. That is, theswitching group G1 adjacent to the mat MAT1 is coupled to the switchingcircuits 300 and 310, and the remaining switching groups G2˜G4 and theremaining switching circuits 320 and 330 are cut off.

A detailed description of the connection path between the bit linesaccording to a connection or a cut-off state of the switching circuits300˜330 and the switching groups G1˜G4 is as follows. If the word lineWL is activated, the local bit lines LBL0 a˜LBL3 a of the correspondingmat may be coupled to the global bit lines GBL0˜GBL3 through theswitching group G1 adjacent to the mat MAT1.

The global bit line GBL0 may be coupled to the local bit line LBL0 a,the sense-amplifier MCSA0, and the reference line GBL0B. The global bitline GBL1 may be coupled to the local bit line LBL1 a, thesense-amplifier MCSA1, and the reference line GBL1B. The global bit lineGBL2 may be coupled to the local bit line LBL2 a, the sense-amplifierMCSA2, and the reference line GBL0B. The global bit line GBL3 may becoupled to the local bit line LBL3 a, the sense-amplifier MCSA3, and thereference line GBL3B.

The local bit lines LBL0 a˜LBL3 a contained in the mat MAT1 may becoupled as true bit lines to the corresponding sense-amplifiersMCSA0˜MCSA3. In addition, the capacitors C4˜C7 of the loading circuits280 and 290 located adjacent to the sense-amplifiers MCSA0˜MCSA3 mayoperate as a reference bit line.

The above-mentioned description has disclosed a detailed explanation ofembodiments of the present disclosure. For reference, the embodimentsmay include additional structures for better understanding of thepresent disclosure as necessary although the additional structures arenot directly associated with technical ideas of the present disclosure.In addition, the Active High or Active Low constructions for indicatingdeactivation states of a signal and circuit may be changed according tothe embodiment.

In order to implement the same function, a transistor structure may bemodified as necessary. That is, the PMOS transistor and the NMOStransistor may be replaced with each other as necessary, and may beimplemented using various transistors as necessary. In order toimplement the same function, a structure of a logic gate may be modifiedas necessary. The above-mentioned circuit modification may be veryfrequently generated, such that a very high number of cases may existand associated modification can be easily appreciated by those skilledin the art, and as such a detailed description thereof will herein beomitted for convenience of description.

As is apparent from the above description, the semiconductor deviceaccording to embodiments of the present disclosure can stabilize abit-line precharge voltage by adjusting a level of a pull-downpower-supply line prior to operation of a sense-amplifier, resulting inreduction of a chip size of the semiconductor device.

Those skilled in the art will appreciate that the embodiments may becarried out in other specific ways than those set forth herein withoutdeparting from the spirit and essential characteristics of thedisclosure. The above embodiments are therefore to be construed in allaspects as illustrative and not restrictive. The scope should bedetermined by the appended claims and their legal equivalents, not bythe above description. Further, all changes coming within the meaningand equivalency range of the appended claims are intended to be embracedtherein. In addition, it is obvious to those skilled in the art thatclaims that are not explicitly cited in each other in the appendedclaims may be presented in combination as an embodiment or included as anew claim by a subsequent amendment after the application is filed.

Although a number of illustrative embodiments consistent with thedisclosure have been described, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. Particularly, numerous variations and modifications arepossible in the component parts and/or arrangements which are within thescope of the disclosure, the drawings and the accompanying claims. Inaddition to variations and modifications in the component parts and/orarrangements, alternative uses will also be apparent to those skilled inthe art.

What is claimed is:
 1. A semiconductor device comprising: asense-amplifier configured to selectively control a connection between apair of bit lines and a pair of sensing bit lines in response to aconnection control signal within an offset compensation period, andprecharge a pull-down power-supply line with a bit line prechargevoltage level in the offset compensation period; and a pull-down voltagecontroller configured to increase a voltage of the pull-downpower-supply line by a predetermined level in response to a pull-downcontrol signal within the offset compensation period.
 2. Thesemiconductor device according to claim 1, wherein the pull-down voltagecontroller includes: a first pull-down drive element configured toselectively provide a ground voltage in response to the pull-downcontrol signal; and a second pull-down drive element coupled between thepull-down power-supply line and the first pull-down drive element suchthat a drain terminal and a gate terminal of the second pull-down driveelement are commonly coupled to each other.
 3. The semiconductor deviceaccording to claim 1, wherein the pull-down voltage controller includes:a third pull-down drive element in which a gate terminal and a sourceterminal are commonly coupled to a ground voltage input terminal; and afourth pull-down drive element coupled between the pull-downpower-supply line and the third pull-down drive element so as to receivea pull-down control signal through a gate terminal thereof.
 4. Thesemiconductor device according to claim 1, wherein the pull-down voltagecontroller includes: a fifth pull-down drive element configured toselectively provide a ground voltage in response to the pull-downcontrol signal; and a first pull-up drive element coupled between thepull-down power-supply line and the fifth pull-down drive element suchthat a drain terminal and a gate terminal of the first pull-up driveelement are commonly coupled to each other.
 5. The semiconductor deviceaccording to claim 1, wherein the pull-down voltage controller includes:a sixth pull-down drive element configured to selectively provide aground voltage in response to the pull-down control signal; and a secondpull-up drive element coupled between the pull-down power-supply lineand the sixth pull-down drive element so as to receive a back-biasvoltage having a negative bias through a gate terminal thereof.
 6. Thesemiconductor device according to claim 1, wherein the pull-down voltagecontroller includes: a third pull-up drive element configured toselectively provide a ground voltage in response to a back-bias voltagehaving a negative bias; and a seventh pull-down drive element coupledbetween the pull-down power-supply line and the third pull-up driveelement so as to receive the pull-down control signal through a gateterminal thereof.
 7. The semiconductor device according to claim 1,wherein the pull-down voltage controller includes: a pull-down driveelement configured to provide a drive voltage to the pull-downpower-supply line in response to the pull-down control signal; and avoltage generator configured to generate the drive voltage capable ofbeing changed in response to a regulation voltage.
 8. The semiconductordevice according to claim 7, wherein the voltage generator includes: acomparator configured to compare a division voltage with a referencevoltage; a plurality of resistors configured to generate the divisionvoltage by dividing the regulation voltage; an eighth pull-down driveelement coupled between a node of the drive voltage and a ground voltageinput terminal so as to receive an output signal of the comparatorthrough a gate terminal thereof; a switching circuit configured toselectively provide the output signal of the comparator in response to aswitching control signal; and a ninth pull-down drive element coupledbetween the node of the drive voltage and a back-bias voltage inputterminal so as to receive an output signal of the switching circuitthrough a gate terminal thereof.
 9. The semiconductor device accordingto claim 1, wherein the pull-down voltage controller includes: aconstant current source configured to provide a constant current; afourth pull-up drive element coupled between the pull-down power-supplyline and the constant current source so as to receive a back-biasvoltage through a gate terminal thereof; a tenth pull-down drive elementcoupled between the constant current source and a ground voltage inputterminal so as to receive the pull-down control signal through a gateterminal thereof; and a capacitor coupled between a ground voltage inputterminal and a common connection node of the constant current source andthe fourth pull-up drive element.
 10. The semiconductor device accordingto claim 1, wherein the pull-down voltage controller includes: acomparator configured to output the pull-down control signal bycomparing a voltage of the pull-down power-supply line with a referencevoltage; and an eleventh pull-down drive element coupled between thepull-down power-supply line and a ground voltage input terminal so as toreceive the pull-down control signal through a gate terminal, whereinthe pull-down voltage controller is located in a row decoder.
 11. Thesemiconductor device according to claim 1, wherein the pull-down voltagecontroller includes: a plurality of delay circuits configured to delay asensing enable signal by a predetermined time; a combination circuitconfigured to output the pull-down control signal by combining thesensing enable signal and output signals of the plurality of delaycircuits; and a twelfth pull-down drive element coupled between thepull-down power-supply line and a ground voltage input terminal so as toreceive the pull-down control signal through a gate terminal thereof.12. The semiconductor device according to claim 1, wherein the offsetcompensation period is a time period in which a bit line is coupled to asensing bit line bar and a bit line bar is coupled to a sensing bit linein response to the connection control signal prior to activation of aword line.
 13. The semiconductor device according to claim 1, whichcomprises a plurality of sense amplifiers, each of which performs asensing operation of the pair of sensing bit lines if the pair of bitlines is separated from the pair of sensing bit lines within apre-sensing period.
 14. The semiconductor device according to claim 13,a semiconductor device further comprising: a plurality of mats, each ofwhich includes a plurality of local bit lines and a plurality of globalbit lines, wherein some parts of the plurality of local bit lines arecoupled to the plurality of sense-amplifiers through the plurality ofglobal bit lines; and a switching circuit configured to controlconnection of the plurality of sense-amplifiers, the plurality of localbit lines, and the plurality of global bit lines in response to aswitching signal.
 15. The semiconductor device according to claim 14,wherein: a first mat and a second mat from among the plurality of matsare located adjacent to each other; a local bit line contained in thefirst mat is coupled to a sense-amplifier adjacent to the second matthrough a global bit line of the second mat; and a local bit linecontained in the second mat is coupled to a sense-amplifier adjacent tothe first mat through a global bit line of the first mat, thesemiconductor device further comprising: a loading circuit located in anedge region of the first mat, and configured to correct loading of asense-amplifier adjacent to the first mat.
 16. The semiconductor deviceaccording to claim 14, wherein: a first mat and a second mat from amongthe plurality of mats are located adjacent to each other; a local bitline contained in the first mat is coupled to a sense-amplifier adjacentto the second mat through a global bit line of the second mat; a localbit line contained in the second mat is coupled to a sense-amplifieradjacent to the first mat through a global bit line of the first mat;and a local bit line of the first mat and a local bit line of the secondmat are coupled to a single sense-amplifier.
 17. The semiconductordevice according to claim 13, wherein: a plurality of mats, each ofwhich includes a plurality of local bit lines and a plurality of globalbit lines; a plurality of switching circuits located in gap regionsinterposed between the plurality of mats, and configured to selectivelyinterconnect the plurality of global bit lines in response to a rowaddress having mat selection information; a plurality of switchinggroups located to correspond to the plurality of mats, and configured toselectively control connection of the plurality of local bit lines andthe plurality of global bit lines; and a loading circuit located in bothedge regions of the plurality of mats, and configured to correct loadingof a contiguous sense-amplifier.
 18. The semiconductor according toclaim 17, wherein the plurality of sense amplifiers are located in bothedge regions of the plurality of mats.
 19. The semiconductor deviceaccording to claim 17, wherein: if any one of the plurality of mats isselected, only a switching circuit and a switching group locatedadjacent to the selected mat are turned on, and the remaining switchingcircuits and the remaining switching groups are turned off.
 20. Thesemiconductor device according to claim 17, wherein: if the first matfrom among the plurality of mats is selected, some parts of the localbit lines of the first mat are coupled to a sense-amplifier adjacent tothe first mat through a global bit line of a first group, and theremaining parts other than the some parts are coupled to asense-amplifier adjacent to a second mat through a global bit line of asecond group.
 21. A semiconductor device comprising: a plurality ofsense-amplifiers configured to perform a sensing operation of a pair ofsensing bit lines if a pair of bit lines is separated from the pair ofsensing bit lines within a pre-sensing period; a plurality of mats, eachof which includes a plurality of local bit lines and a plurality ofglobal bit lines, wherein some parts of the plurality of local bit linesare coupled to the plurality of sense-amplifiers through the pluralityof global bit lines; and a switching circuit configured to controlconnection of the plurality of sense-amplifiers, the plurality of localbit lines, and the plurality of global bit lines in response to aswitching signal.
 22. The semiconductor device according to claim 21,wherein: a first mat and a second mat from among the plurality of matsare located adjacent to each other; a local bit line contained in thefirst mat is coupled to a sense-amplifier adjacent to the second matthrough a global bit line of the second mat; and a local bit linecontained in the second mat is coupled to a sense-amplifier adjacent tothe first mat through a global bit line of the first mat, thesemiconductor device further comprising: a loading circuit located in anedge region of the first mat, and configured to correct loading of asense-amplifier adjacent to the first mat.
 23. The semiconductor deviceaccording to claim 21, wherein: a first mat and a second mat from amongthe plurality of mats are located adjacent to each other; a local bitline contained in the first mat is coupled to a sense-amplifier adjacentto the second mat through a global bit line of the second mat; a localbit line contained in the second mat is coupled to a sense-amplifieradjacent to the first mat through a global bit line of the first mat;and a local bit line of the first mat and a local bit line of the secondmat are coupled to a single sense-amplifier.
 24. The semiconductordevice according to claim 21, wherein: the plurality of sense-amplifiersselectively controls connection between the pair of bit lines and thepair of sensing bit lines in response to a connection control signalwithin an offset compensation period, and precharges a pull-downpower-supply line with a bit line precharge voltage level within theoffset compensation period; and a pull-down voltage controllerconfigured to increase a voltage of the pull-down power-supply line by apredetermined level in response to a pull-down control signal within theoffset compensation period.
 25. A semiconductor device comprising: aplurality of mats, each of which includes a plurality of local bit linesand a plurality of global bit lines; a plurality of sense-amplifierslocated in both edge regions of the plurality of mats; a plurality ofswitching circuits located in gap regions interposed between theplurality of mats, and configured to selectively interconnect theplurality of global bit lines in response to a row address having matselection information; a plurality of switching groups located tocorrespond to the plurality of mats, and configured to selectivelycontrol connection of the plurality of local bit lines and the pluralityof global bit lines; and a loading circuit located in both edge regionsof the plurality of mats, and configured to correct loading of acontiguous sense-amplifier.
 26. The semiconductor device according toclaim 25, wherein: if any one of the plurality of mats is selected, onlya switching circuit and a switching group located adjacent to theselected mat are turned on, and the remaining switching circuits and theremaining switching groups are turned off.
 27. The semiconductor deviceaccording to claim 25, wherein: if the first mat from among theplurality of mats is selected, some parts of the local bit lines of thefirst mat are coupled to a sense-amplifier adjacent to the first matthrough a global bit line of a first group, and the remaining partsother than the some parts are coupled to a sense-amplifier adjacent to asecond mat through a global bit line of a second group.
 28. Thesemiconductor device according to claim 25, wherein: the plurality ofsense-amplifiers selectively controls connection between a pair of bitlines and a pair of sensing bit lines in response to a connectioncontrol signal within an offset compensation period, and precharges apull-down power-supply line with a bit line precharge voltage levelwithin the offset compensation period; and a pull-down voltagecontroller configured to increase a voltage of the pull-downpower-supply line by a predetermined level in response to a pull-downcontrol signal within the offset compensation period.